Prospects of Ga/In/Al–N Nanometer Devices: Electronic Structure, Scattering Rates, and High Field Transport

✍ Scribed by G. Zandler; J. A. Majewski; M. Städele; P. Vogl; F. Compagnone

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 146 KB
• Volume: 204
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(199711)204:1<133::aid-pssb133>3.0.co;2-e