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Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

✍ Scribed by J. Wan; M. Cahay; S. Bandyopadhyay


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
286 KB
Volume
40
Category
Article
ISSN
1386-9477

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