Laser scribing process of in-house textured gallium-doped zinc oxide (GZO) is optimized, aiming to improve the performance of amorphous silicon (a-Si:H) photovoltaic (PV) modules. The reasons for different scribing quality of textured GZO and SnO 2 :F scribed at 1064 nm with pulse duration of 40 ns
โฆ LIBER โฆ
Properties of ultrafast laser textured silicon for photovoltaics
โ Scribed by Vikram V. Iyengar; Barada K. Nayak; Karren L. More; Harry M. Meyer III; Michael D. Biegalski; Jian V. Li; Mool C. Gupta
- Book ID
- 113914433
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 842 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0927-0248
No coin nor oath required. For personal study only.
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