Properties of strontium copper oxide (SCO) deposited by PLD using the 308 nm laser and formation of SCO/Si heterostructures
✍ Scribed by Louloudakis, D. ;Varda, M. ;Papadopoulou, E. L. ;Kayambaki, M. ;Tsagaraki, K. ;Kambilafka, V. ;Modreanu, M. ;Huyberechts, G. ;Aperathitis, E.
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 524 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
The XeCl excimer laser (308 nm) was used for depositing p‐type SrCu~2~O~2~ (SCO) films by pulsed‐laser deposition (PLD) from undoped and Ba‐doped (6%) SCO targets. The SCO films were deposited at 300 °C on glass and p‐type Si substrates, while the oxygen pressure was kept constant at 5 × 10^−2^ Pa and their properties were investigated just after deposition and after annealing at 330 °C in forming gas. The films were amorphous just after deposition but became stoichiometric SrCu~2~O~2~ polycrystalline after annealing and very resistive. The Ba‐doped SCO films showed lower transmittance than the undoped ones but for both films the transmittance increased to around 70–80% in the NIR‐IR spectrum. The optical energy gap was found to be around 3.24 eV after annealing. SCO films deposited on p‐Si exhibited rectifying properties, behaving like p^−^‐SCO/p‐Si heterojunctions and their I–V and C–V characteristics were examined with temperature. An explanation of the diode behaviour is attempted based on materials properties and heterodiode characteristics.