InTech, 2011, โ546p<div class="bb-sep"></div>Silicon carbide (SiC) is an interesting material that has found application in a variety of industries. The two best known applications of this material are its use as an abrasive material and its more recent use as a wide band gap semiconductor for high
Properties of Silicon Carbide
โ Scribed by Gary L. Harris, Gary L. Harris
- Publisher
- Also available
- Year
- 1995
- Tongue
- English
- Leaves
- 297
- Series
- E M I S Datareviews Series
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
Research on SiC is driven by the growing promise of applications in blue light diodes, integrated circuits operating at high temperatures, highpower/high frequency devices and quantum structures. To fulfill this promise it is necessary to understand and fully characterise the SiC system. In this book Professor Gary Harris has drawn together the expert knowledge of numerous researchers from around the world and presented it in one highly structured fully indexed volume with over 1000 references to published and unpublished sources.Also available:Properties, Processing and Applications of Gallium Nitride and Related Semi-conductors - ISBN 9780863417757Properties, Processing and Applications of Indium Phosphide - ISBN 9780863416408The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas including: -Power & Energy -Renewable Energy -Radar, Sonar & Navigation -Electromagnetics -Electrical Measurement -History of Technology -Technology Management
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Research on SiC is driven by the growing promise of applications in blue light diodes, integrated circuits operating at high temperatures, highpower/high frequency devices and quantum structures. To fulfill this promise it is necessary to understand and fully characterise the SiC system. In this boo