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Properties of quantum interference devices with VVOxPb tunnel junctions

✍ Scribed by Dettmann, F.


Publisher
John Wiley and Sons
Year
1978
Tongue
English
Weight
386 KB
Volume
49
Category
Article
ISSN
0031-8965

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## Abstract The influence of seed‐buffer layers on the texture and tunneling parameters was investigated. The spin valve magnetic tunnel junctions (SV‐MTJs) were deposited onto thermally oxidized Si wafers by magnetron sputtering in the following sequence of layers: substrate Si(100)/SiO~2~ 47 nm/b