Properties of posttreated low κ flowfill™ films and their stability after etch, resist and polymer strip processes
✍ Scribed by K. Beekmann; A. Wilby; K. Giles; J. Macneil
- Book ID
- 104305530
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 628 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
The as-deposited FlowfillE layer requires an anneal to remove moisture from the film. Alternative ways of annealing FlowfillE films have been investigated. An R.F. plasma anneal was evaluated with respect to basic film properties. The composition was measured by FTIR spectroscopy, Rutherford backscattering and electron recoil detection analysis. The film stability with regard to etch, resist strip and wet via strip processes was tested by measuring the refractive index, FTIR spectra and k values. Temperature stability was tested up to 7508C using temperature desorpton spectroscopy. The film was found to be very stable up to 5008C and resistant to typical post dielectric process sequences. The wet etch rate of the plasma treated low k films was also tested and found to be lower than that of thermal silicon dioxide.