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Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

✍ Scribed by Veprek, S; Iqbal, Z; Oswald, H R; Webb, A P


Book ID
121090876
Publisher
Institute of Physics
Year
1981
Tongue
English
Weight
954 KB
Volume
14
Category
Article
ISSN
0022-3719

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