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Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

✍ Scribed by M. Kozhevnikov; B.M. Ashkinadze; E. Cohen; A. Ron; L.N. Pfeiffer


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
57 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis


We study photoinduced microwave absorption (PMA) at 36 GHz by photogenerated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobilities are obtained. It is found that the electron cyclotron mass (m cr ) increases with increasing microwave power and with lattice temperature. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential.