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Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy

✍ Scribed by A. V. Voitsekhovskii; S. N. Nesmelov; S. M. Dzyadookh; V. S. Varavin; S. A. Dvoretskii; N. N. Mikhailov; Yu. G. Sidorov; V. V. Vasiliev

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