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Properties of ion-implanted junctions in mercury—cadmium—telluride

✍ Scribed by Kolodny, A.; Kidron, I.

Book ID: 114593294
Publisher: IEEE
Year: 1980
Tongue: English
Weight: 987 KB
Volume: 27
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1980.19816

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## Abstract Secondary ion mass spectrometry (SIMS) requires the preparation and measurement of standard samples in order to be considered a quantitative technique. This normally can be achieved by the production of ion‐implanted specimens in the matrix to be studied. The measured SIMS depth profile