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Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films

✍ Scribed by K. A. Bowers; Z. Yu; K. J. Gossett; J. W. Cook; J. F. Schetzina

Book ID: 112822091
Publisher: Springer US
Year: 1994
Tongue: English
Weight: 371 KB
Volume: 23
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02670631

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## Abstract The influence of nitrogen on the internal structure and so on the electrical properties of silicon thin films obtained by low‐pressure chemical vapor deposition (LPCVD) was studied using several investigation methods. We found by using Raman spectroscopy and SEM observations that a stro