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Properties of high-k Ti1−xSixO2 gate dielectric layers prepared at room temperature

✍ Scribed by Sungyeon Kim; Moon-Ho Ham; Jae-Woong Lee; Woong Lee; Jae-Min Myoung


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
680 KB
Volume
254
Category
Article
ISSN
0169-4332

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