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Properties of ESFI MOS transistors due to the floating substrate and the finite volume

✍ Scribed by Tihanyi, J.; Schlotterer, H.

Book ID: 114591945
Publisher: IEEE
Year: 1975
Tongue: English
Weight: 731 KB
Volume: 22
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1975.18262

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