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Properties of dry-etched CdTe-epitaxial layer surfaces and microstructures

✍ Scribed by M. Neswal; K.H. Greβlehner; K. Lischka; P. Bauer; A. Brandstötter; K. Lübke


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
843 KB
Volume
16
Category
Article
ISSN
0921-5107

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Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show