Characterization of gallium-doped CdS th
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Hani Khallaf; Guangyu Chai; Oleg Lupan; Lee Chow; S. Park; Alfons Schulte
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Article
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2009
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Elsevier Science
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English
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In-situ doping with group III elements has been widely used to decrease the dark resistivity of CdS thin films grown by chemical bath deposition (CBD) . The need to such doping is attributed to the fact that CBD-CdS thin films are highly stoichiometric . Accordingly, the dark resistivity of CdS film