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Propagation scheme for nonequilibrium dynamics of electron transport in nanoscale devices

✍ Scribed by Croy, Alexander; Saalmann, Ulf

Book ID
126242173
Publisher
The American Physical Society
Year
2009
Tongue
English
Weight
637 KB
Volume
80
Category
Article
ISSN
1098-0121

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A model for the simulation of the electron energy distribution in nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET) devices, using a kinetic simulation technique, is implemented. The convective scheme (CS), a method of characteristics, is an accurate method of solving the Boltzman