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Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field close to the recombination-wave threshold

✍ Scribed by B. V. Kornilov; V. V. Privezentsev


Book ID
111757805
Publisher
Springer
Year
2006
Tongue
English
Weight
306 KB
Volume
35
Category
Article
ISSN
1063-7397

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