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Programming options for nanocrystal MOS memories

✍ Scribed by D. Corso; I. Crupi; G. Ammendola; S. Lombardo; C. Gerardi

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Fast and reliable tunnel programming of

✍ Puzzilli, G.; Caputo, D.; Irrera, F. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 116 KB

Modeling of tunneling P/E for nanocrysta

✍ Compagnoni, C.M.; Ielmini, D.; Spinelli, A.S.; Lacaita, A.L. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 429 KB

Memory effects in optically active CdSe

✍ A.W. Achtstein; H. Karl; S. Zhenhua; B. Stritzker 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 529 KB

Memory properties of a Ge nanocrystal MO

✍ X. Ma; C. Wang 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 296 KB

Dynamical modeling of transport in MOS s

✍ Josep Carreras; O. Jambois; M. Perálvarez; Y. Lebour; B. Garrido 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 588 KB

Modeling of programming time of nanocrys

✍ Pavan Singaraju; Rama Venkat 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 527 KB