Profiling the bandgap-adjusted mobility in a bipolar transistor base using the inverse early effect

Effect of Ge content and profile in the

Effect of Ge content and profile in the SiGe base on the performance of a SiGe/Si heterojunction bipolar transistor

✍ Mukul K. Das; N. R. Das; P. K. Basu 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well