Profile design considerations for minimizing base transit time in SiGe HBTs for all levels of injection before onset of Kirk effect

✍ Scribed by Kwok, K.H.; Selvakumar, C.R.

• Book ID: 114538758
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 280 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.936506