Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric

✍ Scribed by S. Abermann; J.K. Efavi; G. Sjoblom; M.C. Lemme; J. Olsson; E. Bertagnolli

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 559 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.01.176