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Process stabilization and enhancement of deposition rate during reactive high power pulsed magnetron sputtering of zirconium oxide

โœ Scribed by K. Sarakinos; J. Alami; C. Klever; M. Wuttig


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
337 KB
Volume
202
Category
Article
ISSN
0257-8972

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โœฆ Synopsis


Reactive high power pulsed magnetron sputtering (HPPMS) of zirconium oxide exhibits a stable and hysteresis-free transition zone, as opposed to reactive direct current magnetron sputtering (dcMS). The stabilization of the transition zone in HPPMS facilitates the growth of transparent zirconium oxide films at lower target coverage, in comparison to dcMS. The lower target coverage, in turn, allows for film deposition rates up to 2 times higher than those achieved by dcMS. The mechanisms which lead to the process stabilization in reactive HPPMS are discussed.


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A novel pulsing technique has been proposed to enhance the deposition rate of film in high power pulsed magnetron sputtering (HPPMS). The detailed investigations on the temporal behavior of the plasma density have been done. The results have provided a clue to it: a temporal discrepancy between the