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Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - Degradation mechanism of InAlN/GaN based HFETs under high electric field stress

✍ Scribed by Zhu, Congyong; Wu, Mo; Kayis, Cemil; Zhang, Fan; Li, Xing; Ferreyra, Romualdo; Avrutin, Vitaliy; Ozgur, Umit; Morkoc, Hadis

Book ID: 120319998
Publisher: SPIE
Year: 2012
Weight: 527 KB
Category: Article
DOI: 10.1117/12.903983

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