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Problem of scale-up in electrochemical systems

✍ Scribed by A. S. Rao

Publisher: Springer
Year: 1974
Tongue: English
Weight: 180 KB
Volume: 4
Category: Article
ISSN: 0021-891X
DOI: 10.1007/bf00615910

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Classified abstracts 4170-4178 30 4170. Ge-GaAs (110) interface formation. (USA) The heterojunction chemistry for Ge grown by molecular beam epitaxy (MBE) on in situ cleaved GaAs exhibits significant interdiffusion in short times at growth temperatures T~ of 430°C (significantly lower critical TG th