Probing Interactions of Ge with Chemical and Thermal SiO 2 to Understand Selective Growth of Ge on Si during Molecular Beam Epitaxy

✍ Scribed by Li, Qiming; Krauss, Joshua L.; Hersee, Stephen; Han, Sang M.

• Book ID: 126092020
• Publisher: American Chemical Society
• Year: 2007
• Tongue: English
• Weight: 252 KB
• Volume: 111
• Category: Article
• ISSN: 1932-7447
• DOI: 10.1021/jp062966o