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π SIMILAR VOLUMES
Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lowtemperature direct wafer bonding with annealing temperatures down to 100 Β°C. The experimental setup and the bond procedure are described and the influences of different experimental parameters, such
A SIMPLE apparatus is described below for attaining hydrostatic pressures up to 11 katm at temperatures attainable with liquefied gases. A brief discussion of all the methods for obtaining high pressures at-low temperatures is given by Brandt and Ginzburg. ~ The main difficulty in designing such an
accuracy of + 0.10e. The width of the resonance curve for which it is still possible to measure the shift on the oscilloscope screen should not be more than ~120 Oe. 1 The accuracy in measuring the magnetrostriction con-2 stants by the method described is ~3%. The sensitivity in striction is 10-8.