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Pressure Effect on Parallel Transport in Low-Dimensional CdTe/CdMgTe Heterostructures

โœ Scribed by D. Wasik; M. Baj; L. Dmowski; J. Siwiec-Matuszyk; E. Janik; T. Wojtowicz; G. Karczewski


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
109 KB
Volume
223
Category
Article
ISSN
0370-1972

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โœฆ Synopsis


We have shown that in CdTe/Cd 1--x Mg x Te heterostructures revealing parallel transport, hydrostatic pressure induces a decrease in both 2D conduction in the quantum well and in low mobility parallel channel. This behaviour, contrary to III-V heterostructures, is due to persistent decrease of the mobility. For samples having thick buffer layer the contribution of the parallel conduction is practically eliminated at high pressure with 2D conduction remaining dominant, while for samples with thin buffer layer the situation with pure 2D conduction is not achieved.


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Heterostructures of Si 0.80 Ge 0.20 /Si (100) were grown by pulsed laser deposition consisting of alternating 10 nm SiGe and silicon layers for a total of 10 periods. The presence of alloy clustering at SiGe/Si interfaces was investigated by parallel transport in transistor structures. Photoluminesc