We present a review of the effect of high pressure on the electronic, optical and defect properties in chalcopyrite semiconductors with the formula I±III±VI 2 . We show that the linear pressure coefficients of the band gap in these materials are not constant. While the bulk moduli of this family of
✦ LIBER ✦
Pressure Dependence of the Band Gap of 4H-SiC
✍ Scribed by J. Zeman; F. Engelbrecht; G. Wellenhofer; C. Peppermüller; R. Helbig; G. Martinez; U. Rössler
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 131 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0370-1972
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