We present the pressure dependence of the defect emissions in the chalcopyrite alloy semiconductor Ag x Cu 1--x GaS 2 for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy conce
✦ LIBER ✦
Pressure Dependence of Raman Modes in the Chalcopyrite Quaternary Alloy AgxCu1—xGaS2
✍ Scribed by In-Hwan Choi; P.Y. Yu
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 152 KB
- Volume
- 223
- Category
- Article
- ISSN
- 0370-1972
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Beginning with the mode Gru È neisen parameter, the pressure, temperature and concentration dependences of phonon frequency have been derived under the condition of variable Gru È neisen parameter with pressure, temperature and composition. Fits to the Raman-active E g mode at %450 cm À1 in TiO 2 an