✦ LIBER ✦
Preparation of ZrO2 ultrathin films as gate dielectrics by limited reaction sputtering—On growth delay time at initial growth stage
✍ Scribed by Y. Zhou; N. Kojima; H. Sugiyama; K. Ohara; K. Sasaki
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 470 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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