Preparation of thin Si:H films in an inductively coupled plasma reactor and analysis of their surface roughness

✍ Scribed by Wen-feng Zhao; Jun-fang Chen; Ran Meng; Yang Wang; Hui Wang; Chao-feng Guo; Yong-qi Xue

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 462 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2009.09.037

✦ Synopsis

using an external water-cooled three-turn antenna. Hydrogenated Si films in the thickness of 1.6 mm are deposited at 150 8C on corning 7101 glass substrate and c-Si substrate. The SiH