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Preparation of SiC nanowires with fins by chemical vapor deposition

โœ Scribed by J.Z. Guo; Y. Zuo; Z.J. Li; W.D. Gao; J.L. Zhang

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
903 KB
Volume
39
Category
Article
ISSN
1386-9477

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โœฆ Synopsis

SiC nanowires with fins have been prepared by chemical vapor deposition in a vertical vacuum furnace by using a powder mixture of milled Si and SiO 2 and gaseous CH 4 as the raw materials. The products were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These investigations confirm that the nanowires with fins are cubic b-SiC. The diameter of the fins is about 100-120 nm and the diameter of the inner core stems is about 60-70 nm. The formation process of the b-SiC nanowires with fins is analyzed and discussed briefly.

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