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Preparation of SiC and Si3N4 whiskers using bean-curd refuse as the Si source

✍ Scribed by S. Motojima; Y. Ogawa; S. Gakei; H. Iwanaga

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 496 KB
Volume: 30
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)01135-4

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✦ Synopsis

fl-SiC and a-Si3N 4 whiskers were obtained from bean-curd refuse, the Si source material, at 1200-1400 °C. The addition of CCI accelerated the growth of the SiC whiskers significantly; a whisker length of 1-4 mm and a thickness of 0.2-5 #m (av. 1 /~m) were obtained at 1300 °C after 2 h. Many SiC whiskers with periodic thick and thin diameters were obtained along with whiskers with uniform thickness.

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