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Preparation of one-dimensional porous silicon photonic quantum-well structures

โœ Scribed by S.H. Xu; Z.H. Xiong; L.L. Gu; Y. Liu; X.M. Ding; J. Zi; X.Y. Hou


Publisher
Springer
Year
2003
Tongue
English
Weight
98 KB
Volume
76
Category
Article
ISSN
1432-0630

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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi