## Abstract An apparatus is described for the preparation of pure silicon by thermal decomposition of trichlorosilane on a hot tantalum wire in a hydrogen atmosphere. The polycrystalline silicon is obtained in the form of rods with a diameter of about 15 mm and a length of 20โ40 cm. The yield of Si
โฆ LIBER โฆ
Preparation of Hyper-Pure Silicon
โ Scribed by Lyon, D. W.; Olson, C. M.; Lewis, E. D.
- Book ID
- 125447396
- Publisher
- The Electrochemical Society
- Year
- 1949
- Tongue
- English
- Weight
- 609 KB
- Volume
- 96
- Category
- Article
- ISSN
- 0013-4651
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