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Preparation of Bi4Ti3O12/Bi2SiO5/Si Structures Derived by Metal Organic Decomposition Technique

✍ Scribed by Yamaguchi, Masaki; Nagatomo, Takao; Masuda, Yoichiro


Book ID
115447326
Publisher
Institute of Pure and Applied Physics
Year
2001
Tongue
English
Weight
919 KB
Volume
40
Category
Article
ISSN
0021-4922

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The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of the metal-ferroelectricinsulator-semiconductor (Au/Bi 4 Ti 3 O 12 /SiO 2 /n-Si) structures (MFIS) were investigated by considering series resistance (R s ) and surface state effects in the frequency