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Preparation, electrical properties and annealing of ZnGeAs2

✍ Scribed by B Mercey; D Chippaux; J Vizot; A Deschanvres


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
514 KB
Volume
47
Category
Article
ISSN
0022-3697

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A high quality ZnGeP 2 (ZGP) single crystal 22 mm in diameter and 70 mm in length was grown by a modified vertical Bridgman method. The as-grown and annealed crystals were characterized using XRD, IR spectrophotometers, positron annihilation lifetime (PAL), Hall Effect and resistivity measurements.