Preparation, and structural, optical and electrical properties of the CdTe1−xSxsystem

✍ Scribed by S. K. J. Al -Ani; M. N. Makadsi; I. K. Al -Shakarchi; C. A. Hogarth

• Publisher: Springer
• Year: 1993
• Tongue: English
• Weight: 534 KB
• Volume: 28
• Category: Article
• ISSN: 0022-2461
• DOI: 10.1007/bf00349059

✦ Synopsis

Thin films of the CdTel_xSx system (0<x<l) have been prepared by a thermal evaporation technique, and their structural, optical and electrical properties have been measured in order to characterize the system. Detailed X-ray analysis showed that the structures are potycrystalline and the interplanar distances have been calculated for those systems. The CdTeo.4So.e system showed a maximum optical absorption. It is observed that the optical gap, Eopt, is indirect for (0 < x< 0.5) while for (0.6 < x< 1 ) it is direct. The variation of Eopt with x in the CdTe~ -xSx system is not linear and the minimum value of Eopt was for x=0.3. The addition of copper dopants up to 3% to the CdTeo.4So.6 system reduced the value of Eopt. The electrical conductivity showed two values of activation energy indicating different dominant conduction mechanisms in different temperature ranges.