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Preparation and Characterization of PZT Films Fabricated on Si Substrate

โœ Scribed by Ying Yang


Publisher
SP Higher Education Press
Year
2006
Tongue
English
Weight
178 KB
Volume
1
Category
Article
ISSN
1673-3584

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โœ P. Zanola; E. Bontempi; C. Ricciardi; G. Barucca; L.E. Depero ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 227 KB

Due to its outstanding electrical and mechanical properties, silicon carbide (SiC) is considered a leading semiconducting material for high temperature sensors. Since the piezoresistive effect in SiC is highly anisotropic and exhibits a dependence on the crystal orientation, the role of the substra