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Preparation and characterization of pulse-plating electrodeposited CuInSe2thin films

โœ Scribed by Tadataka Edamura; Jun'ichiro Muto


Publisher
Springer US
Year
1994
Tongue
English
Weight
659 KB
Volume
5
Category
Article
ISSN
0957-4522

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Preparation and characterization of puls
โœ Murali, K. R. ;Trivedi, D. C. ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 216 KB

## Abstract GaAs is a IIIโ€“V compound possessing high mobility and a direct band gap of 1.43 eV, making it a very suitable candidate for photovoltaic applications. Thin GaAs films were prepared by plating an aqueous solution containing GaCl~3~ and As~2~O~3~ at a pH of 2 and at room temperature. The