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Preparation and characterization of plasma polymerized (ethylene + oxygen) thin films

โœ Scribed by G. W. Prohaska; C. G. Nickoson


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
763 KB
Volume
27
Category
Article
ISSN
0887-624X

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Plasma polymerization of thiophene was carried out in a tubular reactor using an rf source. Various substrates such as aluminum, glass, and NaCl crystal were used. The rate of deposition attained an equilibrium value of 0.35 g cm ฯช2 s ฯช1 . Infrared spectra revealed the formation of polythiophene. Th

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To prepare silicon oxide (SiOx)-deposited poly(ethylene terephthalate) films with high oxygen gas barrier capability, SiOx deposition by plasma polymerization has been investigated from the viewpoint of chemical composition. Tetramethoxysilane (TMOS) is suitable as a starting material for the synthe