Preparation and characterization of arsine derivatives: X-ray crystal structures of As (SitBuMe2)3, As (SiMe3)2(SiPh3), Et3Ga · As(SiMe3)2(SiPh3), and As(SePh)3

✍ Scribed by Ryan A. Baldwin; Hamid Rahbarnoohi; Leonidas J. Jones III; Andrew T. McPhail; Richard L. Wells; Peter S. White; Arnold L. Rheingold; Glenn P. A. Yap

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 680 KB
• Volume: 7
• Category: Article
• ISSN: 1042-7163
• DOI: 10.1002/(sici)1098-1071(199611)7:6<409::aid-hc2>3.0.co;2-3

✦ Synopsis

As(SirBuMe,), (1) was prepared by the salt-elimination reaction between (Na/K), As and 'BuMe,SiCI. Mixing LiAs(SiMe,), with Ph,SiCl (1:l) yielded As(SiMe,),(SiPh,) (2) in a good crystalline yield. Reaction of 2 (1:I) with Et,Ga gave the expected Lewis acid-base adduct Et,Ga * As(SiMe,),(SiPh,) (3). The I:I mole ratio reaction of In(SePh), with As(SiMe,), resulted in a ligand redistribution around the indium and arsenic centers to afford As(SePh), (4) in a low yield. The solid-state structures of 1 4 have been established bv single-crystal X-ray analysis. Crystal data for 1, monoclinic space group P 2,/c, with a = 11.112(2), b = 17.453(2), c = 14.199(2) A, /I = Dedicated to Professor Louis D. Quin on the occasion of his retirement from the Department of Chemistry of the University of Massachusetts at Arnherst.