Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE

✍ Scribed by Yong-ning He; Jing-wen Zhang; Xiao-dong Yang; Qing-an Xu; Xing-hui Liu; Chang-chun Zhu; Xun Hou

• Book ID: 104050919
• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 190 KB
• Volume: 36
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2004.11.005

✦ Synopsis

The high purity ZnO ceramic target and the (MgO) 0.1 (ZnO) 0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary Mg x Zn 1Kx O thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the Mg x Zn 1Kx O film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31 eV for the ZnO film to 3.64 eV for the Mg x Zn 1Kx O alloy film. The Mg content x in the Mg x Zn 1Kx O alloy film was determined to be 0.18.