✦ LIBER ✦
Preparation and C-V characteristic of the Ge-MOS structure using plasma-anodized film as gate insulator
✍ Scribed by Zhaoqi, Sun; Chunrong, Liu
- Book ID
- 125510797
- Publisher
- Institute of Physics
- Year
- 1991
- Tongue
- English
- Weight
- 221 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0022-3727
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