Predictive worst case statistical modeling of 0.8-μm BICMOS bipolar transistors: a methodology based on process and mixed device/circuit level simulators

✍ Scribed by Kizilyalli, I.C.; Ham, T.E.; Singhal, K.; Kearney, J.W.; Lin, W.; Thoma, M.J.

• Book ID: 114535118
• Publisher: IEEE
• Year: 1993
• Tongue: English
• Weight: 821 KB
• Volume: 40
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.210206