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Predicting self-diffusion in metal oxides from first principles: The case of oxygen in tetragonal ZrO

✍ Scribed by Youssef, Mostafa; Yildiz, Bilge


Book ID
121470756
Publisher
The American Physical Society
Year
2014
Tongue
English
Weight
641 KB
Volume
89
Category
Article
ISSN
1098-0121

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## Abstract HfO~2~ high‐__K__ gate dielectric has been used as a new gate dielectric in metal–oxide–semiconductor structures. First‐principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of