Prediction of in-plane distortions due t
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M. Laudon; A. Fisher; R. Engelstad; F. Cerrina; K. Cummings; W. Dauksher; D. Res
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Article
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1997
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Elsevier Science
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English
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In the fabrication of a typical refractory X-ray lithography mask, the pattern transfer process subjects the membrane/pattern to the non-uniform deposition and removal of multiple stressed layers. This removal process can result in unacceptably large pattern distortions in the final mask. This paper