Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM

✍ Scribed by M. Porti; S. Meli; M. Nafrı́a; X. Aymerich

• Book ID: 108361983
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 160 KB
• Volume: 43
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/s0026-2714(03)00173-2