๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Power Microwave FETs Using Epitaxial AlGaAs/GaAs Structures

โœ Scribed by A. K. Bakarov; K. S. Zhuravlev; A. I. Toropov; T. S. Shamirzaev; Yu. B. Myakishev; Yu. N. Rakov


Book ID
110336903
Publisher
Springer
Year
2002
Tongue
English
Weight
52 KB
Volume
31
Category
Article
ISSN
1063-7397

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


GaAs microwave power FET
โœ Fukuta, M.; Suyama, K.; Suzuki, H.; Ishikawa, H. ๐Ÿ“‚ Article ๐Ÿ“… 1976 ๐Ÿ› IEEE ๐ŸŒ English โš– 857 KB
Thermally stable AlGaAs/GaAs microwave p
โœ Bayraktaroglu, B.; Barrette, J.; Fitch, R.; Kehias, L.; Huang, C.I.; Neidhard, R ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› IEEE ๐ŸŒ English โš– 264 KB
A novel low-cost high-conversion-efficie
โœ Young-Ho Suh; Kai Chang ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 82 KB

A novel simple microwave power detector using a GaAs MESFET is developed at 5.8 GHz. The FET detector has good noise characteristics, temperature stability, and dynamic range. Since the availability of FET is more flexible and the price is lower, the FET detector can be more cost effective than the